Venkatesh “Venky” Narayanamurti

Benjamin Peirce Research Professor of Technology and Public Policy (FAS SEAS Applied Physics)


Professor Narayanamurti’s current research is directed mainly at the physics of electron and hole transport in novel semiconductor electronic materials and devices. The primary methods used are scanning tunneling microscopy (STM) and ballistic electron emission microscopy (BEEM). Unlike more traditional methods (such as IV), BEEM allows the study of local transport with nanometer resolution. Depending on the carrier mean free path, interfaces buried deep in the semiconductor can be probed. In addition, the energy distribution of the injected carriers can be independently varied simply by varying the tip voltage. Professor Narayanamurti’s laboratory has four BEEM/STM devices, and the technique is applied to a diverse set of problems.